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200/400V系列

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場(chǎng)效應(yīng)管/MOSFET

RY20N20A2

發(fā)布者：日月辰科技

	規(guī)格型號(hào)	RY20N20A2

	產(chǎn)品參數(shù)	電壓：200V，電流：20A，Vgs：30V，Rds：0.17Ω

	產(chǎn)品品牌	日月辰	產(chǎn)品封裝	TO-252

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詳細(xì)說(shuō)明

RY20N20A2 TO-252封裝

Description

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

1) VDS=200V,ID=20A,RDS(ON) =180MΩ (Max)@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.