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RY50N06C

發(fā)布者：日月辰科技

	規(guī)格型號(hào)	RY50N06C

	產(chǎn)品參數(shù)	電壓：60V，電流：50A，Vgs：10V，Rds：0.02Ω

	產(chǎn)品品牌	日月辰	產(chǎn)品封裝	TO-251

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詳細(xì)說(shuō)明

RY50N06C TO-251

Description

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

1) VDS=60V,ID=50A,RDS(ON)< 20mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

產(chǎn)品PDF資料下載：

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