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RY91N071A3

發(fā)布者：日月辰科技

	規(guī)格型號	RY91N071A3

	產(chǎn)品參數(shù)	電壓：71V，電流：90A，Vgs：10V，Rds：6.8Ω

	產(chǎn)品品牌	日月辰	產(chǎn)品封裝	TO-263

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詳細(xì)說明

RY91N071A3 TO-263封裝

Description

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

1) VDS=71V,ID=90A,RDS(ON)<6.8mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

產(chǎn)品PDF資料下載：

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